The third-generation semiconductor industry "inflection point" has arrived. Exclusive interview of Shanghai Hanxin's original integrated silicon carbide JMOSFET structure technology

The third generation semiconductor mainly refers to the wide bandgap semiconductor materials represented by silicon carbide and gallium chloride, which has unique properties and advantages such as wide bandgap, high voltage resistance, high temperature resistance, heavy current, good thermal conductivity and high frequency. The third-generation semiconductors are mainly used in the fields of electron device, optoelectronic devices and RF electronic devices, which also play a key role in the development of independent innovation and transformation and upgrading of new energy, photovoltaic and communication industries. Among them, silicon carbide is a more mature development of semiconductor materials, and its process is gradually refined and widely used.